Structural analysis of CuInSe2 thin films prepared by selenization of Cu-In films
Identifieur interne : 000020 ( Main/Exploration ); précédent : 000019; suivant : 000021Structural analysis of CuInSe2 thin films prepared by selenization of Cu-In films
Auteurs : RBID : ISTEX:10854_1996_Article_BF00225630.pdfAbstract
This study involves the characterization of thin films of copper indium diselenide (CuInSe2) deposited on soda-lime glass substrates using a two-step process. In this technique electron-beam-evaporated Cu-In precursor layers were reacted with an atmosphere containing H2Se gas. The morphological and structural aspects of the CuInSe2 layers were studied (by scanning electron microscopy and X-ray diffraction) as a function of the Cu-In film morphology and the selenization temperature profile and exposure time. It was found that the Cu-In precursor morphology has a significant influence on the structural properties of the final CuInSe2 film. Selenization of the Cu-In alloys (irrespective of the structure considered) directly at high temperature resulted in films with poor structural properties. However, a vast improvement in the adhesion properties and morphology of the CuInSe2 films were observed when the Cu-In films were exposed to a reactive selenium atmosphere while ramping the temperature between 150 ‡C and 400 ‡C. Selenization of triple-layer structures (Cu/In/Cu and In/Cu/In) resulted in films with good structural properties and excellent compositional uniformity.
DOI: 10.1007/BF00225630
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<record><TEI><teiHeader><fileDesc><titleStmt><title>Structural analysis of CuInSe2 thin films prepared by selenization of Cu-In films</title><author><name>V. Alberts</name><affiliation wicri:level="1"><mods:affiliation>Physics Department, Rand Afrikaans University, Auckland Park, P.O. Box 524, 2006, Johannesburg, South Africa</mods:affiliation><country xml:lang="fr">Afrique du Sud</country><wicri:regionArea>Physics Department, Rand Afrikaans University, Auckland Park, P.O. Box 524, 2006, Johannesburg</wicri:regionArea><wicri:noRegion>Johannesburg</wicri:noRegion></affiliation></author><author><name>R. Swanepoel</name><affiliation wicri:level="1"><mods:affiliation>Physics Department, Rand Afrikaans University, Auckland Park, P.O. Box 524, 2006, Johannesburg, South Africa</mods:affiliation><country xml:lang="fr">Afrique du Sud</country><wicri:regionArea>Physics Department, Rand Afrikaans University, Auckland Park, P.O. Box 524, 2006, Johannesburg</wicri:regionArea><wicri:noRegion>Johannesburg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10854_1996_Article_BF00225630.pdf</idno><date when="1996">1996</date><idno type="doi">10.1007/BF00225630</idno><idno type="wicri:Area/Main/Corpus">000E59</idno><idno type="wicri:Area/Main/Curation">000E59</idno><idno type="wicri:Area/Main/Exploration">000020</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">This study involves the characterization of thin films of copper indium diselenide (CuInSe2) deposited on soda-lime glass substrates using a two-step process. In this technique electron-beam-evaporated Cu-In precursor layers were reacted with an atmosphere containing H2Se gas. The morphological and structural aspects of the CuInSe2 layers were studied (by scanning electron microscopy and X-ray diffraction) as a function of the Cu-In film morphology and the selenization temperature profile and exposure time. It was found that the Cu-In precursor morphology has a significant influence on the structural properties of the final CuInSe2 film. Selenization of the Cu-In alloys (irrespective of the structure considered) directly at high temperature resulted in films with poor structural properties. However, a vast improvement in the adhesion properties and morphology of the CuInSe2 films were observed when the Cu-In films were exposed to a reactive selenium atmosphere while ramping the temperature between 150 ‡C and 400 ‡C. Selenization of triple-layer structures (Cu/In/Cu and In/Cu/In) resulted in films with good structural properties and excellent compositional uniformity.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="fc192b9f47d5c107ccf9010a8c9262d2288463b6"><titleInfo lang="eng"><title>Structural analysis of CuInSe2 thin films prepared by selenization of Cu-In films</title></titleInfo><name type="personal"><namePart type="given">V.</namePart><namePart type="family">Alberts</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physics Department, Rand Afrikaans University, Auckland Park, P.O. Box 524, 2006, Johannesburg, South Africa</affiliation></name><name type="personal"><namePart type="given">R.</namePart><namePart type="family">Swanepoel</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Physics Department, Rand Afrikaans University, Auckland Park, P.O. Box 524, 2006, Johannesburg, South Africa</affiliation></name><typeOfResource>text</typeOfResource><genre>Papers</genre><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1994-12-15</dateCreated><dateCaptured encoding="w3cdtf">1995-03-08</dateCaptured><dateValid encoding="w3cdtf">2004-07-22</dateValid><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">This study involves the characterization of thin films of copper indium diselenide (CuInSe2) deposited on soda-lime glass substrates using a two-step process. In this technique electron-beam-evaporated Cu-In precursor layers were reacted with an atmosphere containing H2Se gas. The morphological and structural aspects of the CuInSe2 layers were studied (by scanning electron microscopy and X-ray diffraction) as a function of the Cu-In film morphology and the selenization temperature profile and exposure time. It was found that the Cu-In precursor morphology has a significant influence on the structural properties of the final CuInSe2 film. Selenization of the Cu-In alloys (irrespective of the structure considered) directly at high temperature resulted in films with poor structural properties. However, a vast improvement in the adhesion properties and morphology of the CuInSe2 films were observed when the Cu-In films were exposed to a reactive selenium atmosphere while ramping the temperature between 150 ‡C and 400 ‡C. Selenization of triple-layer structures (Cu/In/Cu and In/Cu/In) resulted in films with good structural properties and excellent compositional uniformity.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci: Mater Electron</title></titleInfo><titleInfo><title>Journal of Materials Science: Materials in Electronics</title><partNumber>Year: 1996</partNumber><partNumber>Volume: 7</partNumber><partNumber>Number: 2</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1996-04-01</dateIssued><copyrightDate encoding="w3cdtf">1996</copyrightDate></originInfo><subject usage="primary"><topic>Engineering</topic><topic>Materials Processing, Characterization, and Design</topic><topic>Semiconductors, Materials for Electronics</topic></subject><identifier type="issn">0957-4522</identifier><identifier type="issn">Electronic: 1573-482X</identifier><identifier type="matrixNumber">10854</identifier><identifier type="local">IssueArticleCount: 13</identifier><recordInfo><recordOrigin>Chapman & Hall, 1996</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF00225630</identifier><identifier type="matrixNumber">Art5</identifier><identifier type="local">BF00225630</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>91</start><end>99</end></extent></part><recordInfo><recordOrigin>Chapman & Hall, 1996</recordOrigin><recordIdentifier>10854_1996_Article_BF00225630.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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